MOLECULAR BEAM EPITAXIAL GROWTH OF InAs.

Mitsuaki Yano, Masaharu Nogami, Yuichi Matsushima, Morihiko Kimata

    研究成果: Chapter

    39 被引用数 (Scopus)

    抄録

    Thin crystalline films of InAs have been heteroepitaxially grown on (100) surface of GaAs by molecular beam epitaxy. The films are evaluated by optical microscope, SEM, RHEED and electrical measurements. In spite of the existence of a large lattice mismatch between InAs and GaAs, specular InAs films are obtained. Undoped InAs films show the n-type conduction, and their electron concentrations and mobilities are varied depending on the substrate temperature (T//s) during growth. At T//s equals 480 C, single crystalline films with high crystallographic quality and flat surfaces are grown. Furthermore, Mg atoms are successfully doped into InAs during the MBE growth to obtain p-type films.

    本文言語English
    ホスト出版物のタイトルJpn J Appl Phys
    ページ2131-2137
    ページ数7
    16
    12
    出版ステータスPublished - 1977 12

    ASJC Scopus subject areas

    • Engineering(all)

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