InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240 degree C and temperatures of In and P cells were 840 similar 880 degree C and 370 similar 400 degree C, respectively. Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.
|ホスト出版物のタイトル||Jpn J Appl Phys|
|出版ステータス||Published - 1976 12月|
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