MOLECULAR BEAM EPITAXIAL GROWTH OF InP.

Yuichi Matsushima, Yuichi Hirofuji, Shun ichi Gonda, Seiji Mukai, Morihiko Kimata

研究成果: Chapter

9 引用 (Scopus)

抜粋

InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240 degree C and temperatures of In and P cells were 840 similar 880 degree C and 370 similar 400 degree C, respectively. Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.

元の言語English
ホスト出版物のタイトルJpn J Appl Phys
ページ2321-2325
ページ数5
15
エディション12
出版物ステータスPublished - 1976 12
外部発表Yes

    フィンガープリント

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Matsushima, Y., Hirofuji, Y., Gonda, S. I., Mukai, S., & Kimata, M. (1976). MOLECULAR BEAM EPITAXIAL GROWTH OF InP.Jpn J Appl Phys (12 版, 巻 15, pp. 2321-2325)