MOLECULAR BEAM EPITAXIAL GROWTH OF InP.

Yuichi Matsushima; Yuichi Hirofuji; Shun ichi Gonda; Seiji Mukai; Morihiko Kimata

MOLECULAR BEAM EPITAXIAL GROWTH OF InP.

Yuichi Matsushima, Yuichi Hirofuji, Shun ichi Gonda, Seiji Mukai, Morihiko Kimata

研究成果: Chapter

抄録

InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240 degree C and temperatures of In and P cells were 840 similar 880 degree C and 370 similar 400 degree C, respectively. Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.

本文言語	English
ホスト出版物のタイトル	Jpn J Appl Phys
ページ	2321-2325
ページ数	5
巻	15
版	12
出版ステータス	Published - 1976 12
外部発表	はい

ASJC Scopus subject areas

Engineering(all)

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引用スタイル

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abstract = "InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240 degree C and temperatures of In and P cells were 840 similar 880 degree C and 370 similar 400 degree C, respectively. Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.",

author = "Yuichi Matsushima and Yuichi Hirofuji and Gonda, {Shun ichi} and Seiji Mukai and Morihiko Kimata",

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AU - Matsushima, Yuichi

AU - Hirofuji, Yuichi

AU - Gonda, Shun ichi

AU - Mukai, Seiji

AU - Kimata, Morihiko

PY - 1976/12

Y1 - 1976/12

N2 - InP thin crystalline films were grown on (100)-oriented GaAs by molecular beam epitaxy (MBE) and evaluated by RHEED, SEM and IMA. Thin films with high crystalline quality were obtained when the substrate temperature was about 240 degree C and temperatures of In and P cells were 840 similar 880 degree C and 370 similar 400 degree C, respectively. Sn atoms were easily doped into InP during MBE growth, and the surface morphology of InP was greatly improved by Sn doping.

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