抄録
Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.
| 本文言語 | English |
|---|---|
| ページ（範囲） | L1047-L1049 |
| ジャーナル | Japanese Journal of Applied Physics, Part 2: Letters |
| 巻 | 42 |
| 号 | 9 AB |
| DOI | |
| 出版ステータス | Published - 2003 9月 15 |
ASJC Scopus subject areas
- 工学（全般）
- 物理学および天文学（全般）