Molecular-beam epitaxial growth of ZnMgCdS layers and their application to UV-A photodetectors

Masaaki Enami, Kazuaki Tsutsumi, Fumiaki Hirose, Shohei Katsuta, Masakazu Kobayashi

研究成果: Letter査読

9 被引用数 (Scopus)

抄録

Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.

本文言語English
ページ(範囲)L1047-L1049
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
42
9 AB
出版ステータスPublished - 2003 9 15

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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