Zincblende ZnMgCdS quaternary alloy layers were grown by molecular-beam epitaxy. The ZnMgCdS alloy lattice matched with GaAs and exhibited the band-gap energy of approximately 3 eV. Zn, Mg, and CdS were used as source materials. Cd was replaced by Zn or Mg, and the alloy composition was controlled when the growth temperature was set to approximately 210°C. Low-temperature photoluminescence showed dominant band-edge features indicating the high quality of the epilayer. The epilayer was applied to the metal-semiconductor-metal photodetector, and visible-blind UV sensing characteristics were observed.
|ジャーナル||Japanese Journal of Applied Physics, Part 2: Letters|
|出版ステータス||Published - 2003 9 15|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)