Molecular beam epitaxy growth of ZnTe epilayers on c-plane sapphire

Taizo Nakasu, Yuki Kumagai, Kimihiro Nishimura, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

研究成果: Article

23 引用 (Scopus)

抜粋

ZnTe epilayers were grown on transparent substrates by molecular beam epitaxy. The insertion of a low-temperature buffer layer was carried out, and the influence of the buffer layer thickness and its annealing on the crystallographic property were investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that the (111) ZnTe epilayer with the decreased number of domains could be formed on c-sapphire when a 3.5-nm-thick annealed ZnTe buffer layer was inserted. It was shown that the XRD pole figure imaging was a useful means of analyzing domain distributions in the film.

元の言語English
記事番号095502
ジャーナルApplied Physics Express
5
発行部数9
DOI
出版物ステータスPublished - 2012 9 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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