Molecular beam epitaxy growth of ZnTe epilayers on c-plane sapphire

Taizo Nakasu*, Yuki Kumagai, Kimihiro Nishimura, Masakazu Kobayashi, Hiroyoshi Togo, Toshiaki Asahi

*この研究の対応する著者

研究成果: Article査読

23 被引用数 (Scopus)

抄録

ZnTe epilayers were grown on transparent substrates by molecular beam epitaxy. The insertion of a low-temperature buffer layer was carried out, and the influence of the buffer layer thickness and its annealing on the crystallographic property were investigated. Pole figure imaging was used to study the domain distribution in the layer. It was shown that the (111) ZnTe epilayer with the decreased number of domains could be formed on c-sapphire when a 3.5-nm-thick annealed ZnTe buffer layer was inserted. It was shown that the XRD pole figure imaging was a useful means of analyzing domain distributions in the film.

本文言語English
論文番号095502
ジャーナルApplied Physics Express
5
9
DOI
出版ステータスPublished - 2012 9 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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