Molecular beam epitaxy of CdS self-assembled quantum dots on ZnSe

M. Kobayashi*, S. Nakamura, K. Wakao, A. Yoshikawa, K. Takahashi

*この研究の対応する著者

研究成果: Article査読

10 被引用数 (Scopus)

抄録

CdS quantum dot (QD) structures were grown by molecular beam epitaxy on (001) ZnSe. Circular QDs were observed from the sample grown at 220 °C, whereas rectangular QDs were observed from the sample grown at 280 °C. The difference of the dot shape may be related to the metastable nature of CdS since CdS thin films grown at 220 °C show zincblende structures and thin films grown at 280 °C show wurtzite structures. The PL peak position and linewidth were strongly affected by the growth condition of QDs; QD samples with a thicker CdS deposition showed redshifts of the peak position along with the narrowing of the linewidth.

本文言語English
ページ(範囲)1316-1320
ページ数5
ジャーナルJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
16
3
DOI
出版ステータスPublished - 1998
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 電子工学および電気工学

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