MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.

Yuichi Matsushima, Shun ichi Gonda

研究成果: Chapter

30 引用 (Scopus)

抄録

GaP and GaAs//1// minus //xP//x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560 to about 600 degree C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs//1// minus //xP//x is dependent on the substrate temperature, T//s, and the intensity ratio P/As. The rate of decrease, minus dx/dT//s, is found to be 0. 003 degree C** minus **1 for the entire composition-ratio range.

元の言語English
ホスト出版物のタイトルJpn J Appl Phys
ページ2092-2101
ページ数10
15
エディション11
出版物ステータスPublished - 1976 11
外部発表Yes

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Substrates
Molecular beams
Chemical analysis
Molecular beam epitaxy
Temperature
Single crystals
Crystalline materials
Thin films

ASJC Scopus subject areas

  • Engineering(all)

これを引用

Matsushima, Y., & Gonda, S. I. (1976). MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.Jpn J Appl Phys (11 版, 巻 15, pp. 2092-2101)

MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x. / Matsushima, Yuichi; Gonda, Shun ichi.

Jpn J Appl Phys. 巻 15 11. 編 1976. p. 2092-2101.

研究成果: Chapter

Matsushima, Y & Gonda, SI 1976, MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.Jpn J Appl Phys. 11 Edn, 巻. 15, pp. 2092-2101.
Matsushima Y, Gonda SI. MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x. : Jpn J Appl Phys. 11 版 巻 15. 1976. p. 2092-2101
Matsushima, Yuichi ; Gonda, Shun ichi. / MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x. Jpn J Appl Phys. 巻 15 11. 版 1976. pp. 2092-2101
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