MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.

Yuichi Matsushima, Shun ichi Gonda

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GaP and GaAs//1// minus //xP//x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560 to about 600 degree C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs//1// minus //xP//x is dependent on the substrate temperature, T//s, and the intensity ratio P/As. The rate of decrease, minus dx/dT//s, is found to be 0. 003 degree C** minus **1 for the entire composition-ratio range.

元の言語English
ホスト出版物のタイトルJpn J Appl Phys
ページ2092-2101
ページ数10
15
エディション11
出版物ステータスPublished - 1976 11
外部発表Yes

ASJC Scopus subject areas

  • Engineering(all)

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    Matsushima, Y., & Gonda, S. I. (1976). MOLECULAR BEAM EPITAXY OF GaP AND GaAs//1// minus //xP//x.Jpn J Appl Phys (11 版, 巻 15, pp. 2092-2101)