GaP and GaAs//1// minus //xP//x single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560 to about 600 degree C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs//1// minus //xP//x is dependent on the substrate temperature, T//s, and the intensity ratio P/As. The rate of decrease, minus dx/dT//s, is found to be 0. 003 degree C** minus **1 for the entire composition-ratio range.
|ホスト出版物のタイトル||Jpn J Appl Phys|
|出版物ステータス||Published - 1976 11|
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