Molecular beam epitaxy of gap and GaAs1−xPx

Yuichi Matsushima, Shunichi Gonda

研究成果: Article査読

抄録

GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.

本文言語English
ページ(範囲)2093-2101
ページ数9
ジャーナルJapanese Journal of Applied Physics
15
11
DOI
出版ステータスPublished - 1976
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

フィンガープリント

「Molecular beam epitaxy of gap and GaAs<sub>1−x</sub>P<sub>x</sub>」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル