Molecular beam epitaxy of gap and GaAs1−xPx

Yuichi Matsushima, Shunichi Gonda

研究成果: Article

抄録

GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.

元の言語English
ページ(範囲)2093-2101
ページ数9
ジャーナルJapanese Journal of Applied Physics
15
発行部数11
DOI
出版物ステータスPublished - 1976
外部発表Yes

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Molecular beam epitaxy
molecular beam epitaxy
Substrates
Molecular beams
Chemical analysis
Temperature
molecular beams
temperature
flat surfaces
tendencies
Single crystals
Crystalline materials
Thin films
single crystals
thin films

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Molecular beam epitaxy of gap and GaAs1−xPx. / Matsushima, Yuichi; Gonda, Shunichi.

:: Japanese Journal of Applied Physics, 巻 15, 番号 11, 1976, p. 2093-2101.

研究成果: Article

Matsushima, Yuichi ; Gonda, Shunichi. / Molecular beam epitaxy of gap and GaAs1−xPx. :: Japanese Journal of Applied Physics. 1976 ; 巻 15, 番号 11. pp. 2093-2101.
@article{b95aece20a644e4cab581f29c8edd5a8,
title = "Molecular beam epitaxy of gap and GaAs1−xPx",
abstract = "GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.",
author = "Yuichi Matsushima and Shunichi Gonda",
year = "1976",
doi = "10.1143/JJAP.15.2093",
language = "English",
volume = "15",
pages = "2093--2101",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "11",

}

TY - JOUR

T1 - Molecular beam epitaxy of gap and GaAs1−xPx

AU - Matsushima, Yuichi

AU - Gonda, Shunichi

PY - 1976

Y1 - 1976

N2 - GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.

AB - GaP and GaAs1−xPx single crystal thin films were successfully grown on (100)-oriented GaP substrates by molecular beam epitaxy. At lower substrate temperatures these materials have a tendency to grow in pyramidal forms. However, at substrate temperatures of 560-600 °C, single crystalline films with high crystallographic quality and flat surfaces are grown at the intensity ratio of molecular beams, P/Ga, of about 100. The composition ratio x of GaAs1−xPx is dependent on the substrate temperature, Ts, and the intensity ratio P/As. The rate of decrease,-dx/dTs, is found to be 0.003 °C−1 for the entire composition-ratio range.

UR - http://www.scopus.com/inward/record.url?scp=3843140276&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=3843140276&partnerID=8YFLogxK

U2 - 10.1143/JJAP.15.2093

DO - 10.1143/JJAP.15.2093

M3 - Article

VL - 15

SP - 2093

EP - 2101

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 11

ER -