MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x.

Mitsuaki Yano, Yukio Suzuki, Tetsuo Ishii, Yuichi Matsushima, Morihiko Kimata

    研究成果: Article

    48 引用 (Scopus)

    抄録

    GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.

    元の言語English
    ページ(範囲)2091-2096
    ページ数6
    ジャーナルJpn J Appl Phys
    17
    発行部数12
    出版物ステータスPublished - 1978 12

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    Molecular beam epitaxy
    Bending (forming)
    Epitaxial layers
    photoabsorption
    Chemical analysis
    Electric properties
    Energy gap
    molecular beam epitaxy
    electrical properties
    Single crystals
    Impurities
    conduction
    Thin films
    impurities
    Defects
    single crystals
    defects
    Substrates
    thin films
    profiles

    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    これを引用

    Yano, M., Suzuki, Y., Ishii, T., Matsushima, Y., & Kimata, M. (1978). MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. Jpn J Appl Phys, 17(12), 2091-2096.

    MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. / Yano, Mitsuaki; Suzuki, Yukio; Ishii, Tetsuo; Matsushima, Yuichi; Kimata, Morihiko.

    :: Jpn J Appl Phys, 巻 17, 番号 12, 12.1978, p. 2091-2096.

    研究成果: Article

    Yano, M, Suzuki, Y, Ishii, T, Matsushima, Y & Kimata, M 1978, 'MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x.', Jpn J Appl Phys, 巻. 17, 番号 12, pp. 2091-2096.
    Yano M, Suzuki Y, Ishii T, Matsushima Y, Kimata M. MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. Jpn J Appl Phys. 1978 12;17(12):2091-2096.
    Yano, Mitsuaki ; Suzuki, Yukio ; Ishii, Tetsuo ; Matsushima, Yuichi ; Kimata, Morihiko. / MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x. :: Jpn J Appl Phys. 1978 ; 巻 17, 番号 12. pp. 2091-2096.
    @article{57e6a36131f44bad9de7969dfa01a626,
    title = "MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x.",
    abstract = "GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.",
    author = "Mitsuaki Yano and Yukio Suzuki and Tetsuo Ishii and Yuichi Matsushima and Morihiko Kimata",
    year = "1978",
    month = "12",
    language = "English",
    volume = "17",
    pages = "2091--2096",
    journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
    issn = "0021-4922",
    publisher = "Japan Society of Applied Physics",
    number = "12",

    }

    TY - JOUR

    T1 - MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x.

    AU - Yano, Mitsuaki

    AU - Suzuki, Yukio

    AU - Ishii, Tetsuo

    AU - Matsushima, Yuichi

    AU - Kimata, Morihiko

    PY - 1978/12

    Y1 - 1978/12

    N2 - GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.

    AB - GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.

    UR - http://www.scopus.com/inward/record.url?scp=0018060157&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=0018060157&partnerID=8YFLogxK

    M3 - Article

    AN - SCOPUS:0018060157

    VL - 17

    SP - 2091

    EP - 2096

    JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

    SN - 0021-4922

    IS - 12

    ER -