抄録
GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.
本文言語 | English |
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ページ(範囲) | 2091-2096 |
ページ数 | 6 |
ジャーナル | Jpn J Appl Phys |
巻 | 17 |
号 | 12 |
出版ステータス | Published - 1978 12月 |
ASJC Scopus subject areas
- 物理学および天文学(その他)