MOLECULAR BEAM EPITAXY OF GaSb AND GaSb//xAs//1// minus //x.

Mitsuaki Yano*, Yukio Suzuki, Tetsuo Ishii, Yuichi Matsushima, Morihiko Kimata

*この研究の対応する著者

    研究成果: Article査読

    54 被引用数 (Scopus)

    抄録

    GaSb and GaSb//xAs//1// minus //x single crystal thin films were successfully grown by molecular beam epitaxy. Undoped GaSb showed p-type conduction, and Te was found to be effective as a donor impurity for the MBE-grown GaSb. An in-depth profile of the electrical property of these films revealed that many defects are contained in the epitaxial layer near the interface between the grown layer and the substrate. GaSb//xAs//1// minus //x films with entire composition were prepared, and the energy gap measured by photoabsorption shows a downward bowing as a function of the composition.

    本文言語English
    ページ(範囲)2091-2096
    ページ数6
    ジャーナルJpn J Appl Phys
    17
    12
    出版ステータスPublished - 1978 12

    ASJC Scopus subject areas

    • 物理学および天文学(その他)

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