Molecular beam epitaxy of stoichiometric tin–telluride thin films

Kaito Tsuboi*, Nan Su, Shotaro Kobayashi, Kota Sugimoto, Masakazu Kobayashi

*この研究の対応する著者

研究成果: Article査読

抄録

Tin–telluride (SnTe) thin films were grown on (0 0 1)-oriented GaAs substrates using molecular beam epitaxy. Samples were grown with various molecular beam intensity ratios at substrate temperatures of 225 °C and 240 °C. The crystallinity of the SnTe thin films was studied using X-ray diffraction θ–2θ measurements. Stoichiometric SnTe layers were achieved by tuning both molecular beam intensity ratio and substrate temperature. It was also found that the excess Te remained in films when the molecular beam intensity ratio was Te rich. The (1 1 1)-oriented domain was confirmed when the substrate temperature was 240 °C. Continuous film formation was confirmed from cross-sectional transmission electron microscopy (TEM) observation. The segregation of Te for certain samples were also confirmed from the TEM energy dispersive x-ray mapping.

本文言語English
論文番号126805
ジャーナルJournal of Crystal Growth
597
DOI
出版ステータスPublished - 2022 11月 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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