Molecular dynamics simulation of dipole layer formation at high-k/SiO2 interfaces

T. Watanabe, R. Kuriyama, M. Hashiguchi, R. Takahashi, K. Shimura, A. Ogura, S. Satoh

研究成果: Conference article

4 引用 (Scopus)

抜粋

Electric dipole layer formation at high-k/SiO2 interface is reproduced by classical molecular dynamics simulation based on a simple two-body rigid ion model (1). The dipole layer was spontaneously formed by the migration of oxygen ions across the high-k/SiO2 interface. In the case of Al2O3/SiO2, a part of oxygen ions of Al2O3 penetrated into the SiO2 side, resulting in the formation of a built-in potential of about 0.5 V. The opposite migration of oxygen ions, from SiO2 side to high-k oxide side, is also reproduced by using different potential parameters of ionic radius and effective charge. The simulation result suggests that the dipole is not merely formed by the oxygen density difference. Rather, oxygen ions are driven by some interatomic forces at the interface. We discuss the origin of the driving force of the oxygen migration in terms of the multipole moments around cations in the oxides.

元の言語English
ページ(範囲)3-15
ページ数13
ジャーナルECS Transactions
64
発行部数8
DOI
出版物ステータスPublished - 2014 1 1
イベントSymposium on Semiconductors, Dielectrics, and Metals for Nanoelectronics 12 - 2014 ECS and SMEQ Joint International Meeting - Cancun, Mexico
継続期間: 2014 10 52014 10 9

ASJC Scopus subject areas

  • Engineering(all)

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  • これを引用

    Watanabe, T., Kuriyama, R., Hashiguchi, M., Takahashi, R., Shimura, K., Ogura, A., & Satoh, S. (2014). Molecular dynamics simulation of dipole layer formation at high-k/SiO2 interfaces. ECS Transactions, 64(8), 3-15. https://doi.org/10.1149/06408.0003ecst