TY - JOUR
T1 - Molecular dynamics simulation of heat transport in silicon nano-structures covered with oxide films
AU - Zushi, Tomofumi
AU - Kamakura, Yoshinari
AU - Taniguchi, Kenji
AU - Ohdomari, Iwao
AU - Watanabe, Takanobu
PY - 2010/4
Y1 - 2010/4
N2 - We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO2 film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO2 film thickness.
AB - We perform a series of molecular dynamics (MD) simulations to investigate the heat transport in Si nano-structures, while explicitly including oxide cover layers in the simulation system for the first time. The dependences of thermal diffusion velocity on the thicknesses of the SiO2 film and Si lattice are investigated. The results show that thermal diffusion velocity decreases with Si lattice thickness and does not depend on SiO2 film thickness.
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U2 - 10.1143/JJAP.49.04DN08
DO - 10.1143/JJAP.49.04DN08
M3 - Article
AN - SCOPUS:77952699532
SN - 0021-4922
VL - 49
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
IS - 4 PART 2
M1 - 04DN08
ER -