Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates

Shinji Munetoh, Koji Moriguchi, Teruaki Motooka, Kazuhito Kamei

研究成果: Conference contribution

抄録

Dynamical phenomena during the solid phase epitaxy (SPE) of guest-free Si clathrates (Si34 and Si46) via molecular-dynamics (MD) simulations using the Tersoff potential have been reported. The activation energy of SPE for Si34 has been found to correspond with the experimental value for the cubic diamond phase (c-Si; approximately 2.7eV), while the SPE rates of Si46 are much lower than that of c-Si. The structural transition from Si46 (type-I) to Si34 (type-II) can be also observed during the Si46 [001] SPE. The present results suggest that it is worthwhile to intensify experimental studies concerning crystal growth techniques of clathrate materials and these interesting Si forms may open up a new field in "silicon technologies".

元の言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
ページ457-462
ページ数6
691
出版物ステータスPublished - 2002
外部発表Yes
イベントThermoelectric Materials 2001-Research and Applications - Boston, MA, United States
継続期間: 2001 11 262001 11 29

Other

OtherThermoelectric Materials 2001-Research and Applications
United States
Boston, MA
期間01/11/2601/11/29

Fingerprint

Silicon
Epitaxial growth
Molecular dynamics
Diamond
Crystallization
Crystal growth
Diamonds
Activation energy
Computer simulation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

これを引用

Munetoh, S., Moriguchi, K., Motooka, T., & Kamei, K. (2002). Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates. : Materials Research Society Symposium - Proceedings (巻 691, pp. 457-462)

Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates. / Munetoh, Shinji; Moriguchi, Koji; Motooka, Teruaki; Kamei, Kazuhito.

Materials Research Society Symposium - Proceedings. 巻 691 2002. p. 457-462.

研究成果: Conference contribution

Munetoh, S, Moriguchi, K, Motooka, T & Kamei, K 2002, Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates. : Materials Research Society Symposium - Proceedings. 巻. 691, pp. 457-462, Thermoelectric Materials 2001-Research and Applications, Boston, MA, United States, 01/11/26.
Munetoh S, Moriguchi K, Motooka T, Kamei K. Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates. : Materials Research Society Symposium - Proceedings. 巻 691. 2002. p. 457-462
Munetoh, Shinji ; Moriguchi, Koji ; Motooka, Teruaki ; Kamei, Kazuhito. / Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates. Materials Research Society Symposium - Proceedings. 巻 691 2002. pp. 457-462
@inproceedings{8e7929d0b5be4d87b9eabc9128f7f4e5,
title = "Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates",
abstract = "Dynamical phenomena during the solid phase epitaxy (SPE) of guest-free Si clathrates (Si34 and Si46) via molecular-dynamics (MD) simulations using the Tersoff potential have been reported. The activation energy of SPE for Si34 has been found to correspond with the experimental value for the cubic diamond phase (c-Si; approximately 2.7eV), while the SPE rates of Si46 are much lower than that of c-Si. The structural transition from Si46 (type-I) to Si34 (type-II) can be also observed during the Si46 [001] SPE. The present results suggest that it is worthwhile to intensify experimental studies concerning crystal growth techniques of clathrate materials and these interesting Si forms may open up a new field in {"}silicon technologies{"}.",
author = "Shinji Munetoh and Koji Moriguchi and Teruaki Motooka and Kazuhito Kamei",
year = "2002",
language = "English",
volume = "691",
pages = "457--462",
booktitle = "Materials Research Society Symposium - Proceedings",

}

TY - GEN

T1 - Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates

AU - Munetoh, Shinji

AU - Moriguchi, Koji

AU - Motooka, Teruaki

AU - Kamei, Kazuhito

PY - 2002

Y1 - 2002

N2 - Dynamical phenomena during the solid phase epitaxy (SPE) of guest-free Si clathrates (Si34 and Si46) via molecular-dynamics (MD) simulations using the Tersoff potential have been reported. The activation energy of SPE for Si34 has been found to correspond with the experimental value for the cubic diamond phase (c-Si; approximately 2.7eV), while the SPE rates of Si46 are much lower than that of c-Si. The structural transition from Si46 (type-I) to Si34 (type-II) can be also observed during the Si46 [001] SPE. The present results suggest that it is worthwhile to intensify experimental studies concerning crystal growth techniques of clathrate materials and these interesting Si forms may open up a new field in "silicon technologies".

AB - Dynamical phenomena during the solid phase epitaxy (SPE) of guest-free Si clathrates (Si34 and Si46) via molecular-dynamics (MD) simulations using the Tersoff potential have been reported. The activation energy of SPE for Si34 has been found to correspond with the experimental value for the cubic diamond phase (c-Si; approximately 2.7eV), while the SPE rates of Si46 are much lower than that of c-Si. The structural transition from Si46 (type-I) to Si34 (type-II) can be also observed during the Si46 [001] SPE. The present results suggest that it is worthwhile to intensify experimental studies concerning crystal growth techniques of clathrate materials and these interesting Si forms may open up a new field in "silicon technologies".

UR - http://www.scopus.com/inward/record.url?scp=0036352249&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036352249&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:0036352249

VL - 691

SP - 457

EP - 462

BT - Materials Research Society Symposium - Proceedings

ER -