Molecular-dynamics studies on solid phase epitaxy of guest-free silicon clathrates

Shinji Munetoh, Koji Moriguchi, Teruaki Motooka*, Kazuhito Kamei

*この研究の対応する著者

研究成果: Conference contribution

抄録

Dynamical phenomena during the solid phase epitaxy (SPE) of guest-free Si clathrates (Si34 and Si46) via molecular-dynamics (MD) simulations using the Tersoff potential have been reported. The activation energy of SPE for Si34 has been found to correspond with the experimental value for the cubic diamond phase (c-Si; approximately 2.7eV), while the SPE rates of Si46 are much lower than that of c-Si. The structural transition from Si46 (type-I) to Si34 (type-II) can be also observed during the Si46 [001] SPE. The present results suggest that it is worthwhile to intensify experimental studies concerning crystal growth techniques of clathrate materials and these interesting Si forms may open up a new field in "silicon technologies".

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
ページ457-462
ページ数6
691
出版ステータスPublished - 2002
外部発表はい
イベントThermoelectric Materials 2001-Research and Applications - Boston, MA, United States
継続期間: 2001 11 262001 11 29

Other

OtherThermoelectric Materials 2001-Research and Applications
国/地域United States
CityBoston, MA
Period01/11/2601/11/29

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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