Monolayer MoSe2 grown by chemical vapor deposition for fast photodetection

Yung Huang Chang, Wenjing Zhang, Yihan Zhu, Yu Han, Jiang Pu, Jan Kai Chang, Wei Ting Hsu, Jing Kai Huang, Chang Lung Hsu, Ming Hui Chiu, Taishi Takenobu, Henan Li, Chih I. Wu, Wen Hao Chang, Andrew Thye Shen Wee, Lain Jong Li*

*この研究の対応する著者

    研究成果: Article査読

    432 被引用数 (Scopus)

    抄録

    Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical and optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline molybdenum diselenide (MoSe2) monolayers have been successfully synthesized by the chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison for MoS2 and MoSe 2 monolayers reveals that the MoSe2 monolayer shows a much weaker bound exciton peak; hence, the phototransistor based on MoSe2 presents a much faster response time (<25 ms) than the corresponding 30 s for the CVD MoS2 monolayer at room temperature in ambient conditions. The images obtained from transmission electron microscopy indicate that the MoSe exhibits fewer defects than MoS2. This work provides the fundamental understanding for the differences in optoelectronic behaviors between MoSe2 and MoS2 and is useful for guiding future designs in 2D material-based optoelectronic devices.

    本文言語English
    ページ(範囲)8582-8590
    ページ数9
    ジャーナルACS Nano
    8
    8
    DOI
    出版ステータスPublished - 2014

    ASJC Scopus subject areas

    • 工学(全般)
    • 材料科学(全般)
    • 物理学および天文学(全般)

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