Monolithic Four-Beam Semiconductor Laser Array with Built-in Monitoring Photodiodes

T. Yamaguchi, K. Yodoshi, K. Minakuchi, Y. Inoue, N. Tabuchi, K. Komeda, H. Hamada, T. Niina

研究成果: Article査読

4 被引用数 (Scopus)

抄録

A four-beam semiconductor laser was developed in which a monolithic array of four individually addressable GaAlAs high power lasers and four integrated Si photodiodes for monitoring the light output power of laser beams are housed in a single package. The main specifications are as follows; output power per beam, 40 mW; wavelength, 830 nm; and monitoring current at 30 mW, 100 ˜200 µA. Thermal analysis by numerical simulation was carried out and compared to experimental values observed during simultaneous operation of the multiple elemental lasers. The operating lifetime is estimated to be more than 10, 000 hrs at room temperature.

本文言語English
ページ(範囲)17-23
ページ数7
ジャーナルProceedings of SPIE - The International Society for Optical Engineering
1043
DOI
出版ステータスPublished - 1989 6月 22
外部発表はい

ASJC Scopus subject areas

  • 応用数学
  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • コンピュータ サイエンスの応用

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