Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

Noriyoshi Yamauchi; Yasushi Inaba; Masamichi Okamura

Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

Noriyoshi Yamauchi^*, Yasushi Inaba, Masamichi Okamura

^*この研究の対応する著者

研究成果: Paper › 査読

1 被引用数 (Scopus)

抄録

To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

本文言語	English
ページ	691-692
ページ数	2
出版ステータス	Published - 1992 12月 1
外部発表	はい
イベント	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn 継続期間: 1992 8月 26 → 1992 8月 28

Other

Other	Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
City	Tsukuba, Jpn
Period	92/8/26 → 92/8/28

ASJC Scopus subject areas

工学（全般）

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Link to publication in Scopus

引用スタイル

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title = "Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors",

abstract = "To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.",

author = "Noriyoshi Yamauchi and Yasushi Inaba and Masamichi Okamura",

year = "1992",

month = dec,

day = "1",

language = "English",

pages = "691--692",

note = "Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 ; Conference date: 26-08-1992 Through 28-08-1992",

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T1 - Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

AU - Yamauchi, Noriyoshi

AU - Inaba, Yasushi

AU - Okamura, Masamichi

PY - 1992/12/1

Y1 - 1992/12/1

N2 - To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

AB - To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

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UR - http://www.scopus.com/inward/citedby.url?scp=0026959158&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0026959158

SP - 691

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T2 - Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92

Y2 - 26 August 1992 through 28 August 1992

ER -

Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

抄録

Other

ASJC Scopus subject areas

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