抄録
To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.
本文言語 | English |
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ページ | 691-692 |
ページ数 | 2 |
出版ステータス | Published - 1992 12月 1 |
外部発表 | はい |
イベント | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn 継続期間: 1992 8月 26 → 1992 8月 28 |
Other
Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
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City | Tsukuba, Jpn |
Period | 92/8/26 → 92/8/28 |
ASJC Scopus subject areas
- 工学(全般)