Monolithically integrated photodetector-amplifier using a-Si:H p-i-n photodiodes and poly-Si thin-film transistors

Noriyoshi Yamauchi*, Yasushi Inaba, Masamichi Okamura

*この研究の対応する著者

研究成果: Paper査読

抄録

To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.

本文言語English
ページ691-692
ページ数2
出版ステータスPublished - 1992 12 1
外部発表はい
イベントExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn
継続期間: 1992 8 261992 8 28

Other

OtherExtended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92
CityTsukuba, Jpn
Period92/8/2692/8/28

ASJC Scopus subject areas

  • 工学(全般)

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