抄録
To achieve two-dimensional arrays with massive pixels, we propose a photodetecting circuit consisting of a bridge photodetector surface and a CMOS differential amplifier, both monolithically integrated on a transparent substrate. In this work, we have fabricated and characterized a test circuit using a a-Si:H p-i-n photodiodes (PDs) and poly-Si thin-film transistors (TFTs) to demonstrate the feasibility of such photodetctor-amplifier.
| 本文言語 | English |
|---|---|
| ページ | 691-692 |
| ページ数 | 2 |
| 出版ステータス | Published - 1992 12 1 |
| 外部発表 | はい |
| イベント | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 - Tsukuba, Jpn 継続期間: 1992 8 26 → 1992 8 28 |
Other
| Other | Extended Abstracts of the 1992 International Conference on Solid State Devices and Materials - SSDM '92 |
|---|---|
| City | Tsukuba, Jpn |
| Period | 92/8/26 → 92/8/28 |
ASJC Scopus subject areas
- 工学（全般）