In this research, bismuth and tellurium based thermoelectric materials are studied and electrodeposition method was adapted to fabricate the devices. To improve the thermoelectric performance, the thickness of the patterned films was attempted to be increased up to 30 μm. Film properties, such as morphology, composition, resistivity and thermoelectric output, of p-type Cu-added Bi-Sb-Te films were investigated. It was found that the thermoelectric properties were improved with an increase in the film thickness. An annealed buffer layer was created as substrate to control the morphology of Bi-Sb-Te films to be more compact and denser. Finally, 30 μm thick p-type Bi-Sb-Te patterned-films were successfully fabricated, indicating the applicability to micro-thermoelectric devices.