MOSFETs on (110) C-H Diamond: ALD Al2O3/Diamond Interface Analysis and High Performance Normally-OFF Operation Realization

Benjian Liu, Te Bi, Yu Fu, Ken Kudara, Shoichiro Imanishi, Kang Liu, Bing Dai, Jiaqi Zhu, Hiroshi Kawarada*

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Hole concentration of 2-D hole gas (2DHG) on (110) diamond is higher than that on other faces, making it the best choice for power device application. Detailed analysis of atomic layer deposition (ALD) Al2O3/(110) C-H diamond interface structure is of vital importance. MOSFETs with thin (10 nm) and thick (100 nm) ALD Al2O3 layer were made in this study. The microstructure of Al2O3 on (110) C-H diamond was analyzed. Abrupt interface of ALD Al2O3/C-H diamond was observed through high resolution transmission electron microscope (HRTEM). Cascode structure using diamond MOSFETs and enhancement mode silicon MOSFET is fabricated and its high performance is confirmed.

本文言語English
ページ(範囲)949-955
ページ数7
ジャーナルIEEE Transactions on Electron Devices
69
3
DOI
出版ステータスPublished - 2022 3月 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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