MOSFETs on polished surfaces of polycrystalline diamond

K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita, Hiroshi Kawarada

    研究成果: Article

    15 引用 (Scopus)

    抄録

    MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

    元の言語English
    ページ（範囲）1831-1833
    ページ数3
    ジャーナルDiamond and Related Materials
    巻8
    発行部数10
    出版物ステータスPublished - 1999 10

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    Diamond
    Diamonds
    field effect transistors
    diamonds
    Field effect transistors
    Transconductance
    Electric breakdown
    transconductance
    electrical faults
    Sensors
    wafers
    sensors

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    これを引用

    Kitatani, K., Umezawa, H., Tsugawa, K., Ueyama, K., Ishikura, T., Yamashita, S., & Kawarada, H. (1999). MOSFETs on polished surfaces of polycrystalline diamond. Diamond and Related Materials, 8(10), 1831-1833.

    MOSFETs on polished surfaces of polycrystalline diamond. / Kitatani, K.; Umezawa, H.; Tsugawa, K.; Ueyama, K.; Ishikura, T.; Yamashita, S.; Kawarada, Hiroshi.

    ：: Diamond and Related Materials, 巻 8, 番号 10, 10.1999, p. 1831-1833.

    研究成果: Article

    Kitatani, K, Umezawa, H, Tsugawa, K, Ueyama, K, Ishikura, T, Yamashita, S & Kawarada, H 1999, 'MOSFETs on polished surfaces of polycrystalline diamond', Diamond and Related Materials, 巻. 8, 番号 10, pp. 1831-1833.
    Kitatani K, Umezawa H, Tsugawa K, Ueyama K, Ishikura T, Yamashita S その他. MOSFETs on polished surfaces of polycrystalline diamond. Diamond and Related Materials. 1999 10;8(10):1831-1833.
    Kitatani, K. ; Umezawa, H. ; Tsugawa, K. ; Ueyama, K. ; Ishikura, T. ; Yamashita, S. ; Kawarada, Hiroshi. / MOSFETs on polished surfaces of polycrystalline diamond. ：: Diamond and Related Materials. 1999 ; 巻 8, 番号 10. pp. 1831-1833.
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    AU - Kitatani, K.

    AU - Umezawa, H.

    AU - Tsugawa, K.

    AU - Ueyama, K.

    AU - Ishikura, T.

    AU - Yamashita, S.

    AU - Kawarada, Hiroshi

    PY - 1999/10

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    N2 - MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

    AB - MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

    KW - Diamond

    KW - Hydrogen-terminated

    KW - MOSFET

    KW - Polycrystalline

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