MOSFETs on polished surfaces of polycrystalline diamond

K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita, Hiroshi Kawarada

    研究成果: Article

    15 引用 (Scopus)

    抜粋

    MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

    元の言語English
    ページ(範囲)1831-1833
    ページ数3
    ジャーナルDiamond and Related Materials
    8
    発行部数10
    出版物ステータスPublished - 1999 10

      フィンガープリント

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Materials Chemistry
    • Surfaces, Coatings and Films
    • Surfaces and Interfaces

    これを引用

    Kitatani, K., Umezawa, H., Tsugawa, K., Ueyama, K., Ishikura, T., Yamashita, S., & Kawarada, H. (1999). MOSFETs on polished surfaces of polycrystalline diamond. Diamond and Related Materials, 8(10), 1831-1833.