抜粋
MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.
| 元の言語 | English |
|---|---|
| ページ（範囲） | 1831-1833 |
| ページ数 | 3 |
| ジャーナル | Diamond and Related Materials |
| 巻 | 8 |
| 発行部数 | 10 |
| 出版物ステータス | Published - 1999 10 |
フィンガープリント
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Materials Chemistry
- Surfaces, Coatings and Films
- Surfaces and Interfaces
これを引用
Kitatani, K., Umezawa, H., Tsugawa, K., Ueyama, K., Ishikura, T., Yamashita, S., & Kawarada, H. (1999). MOSFETs on polished surfaces of polycrystalline diamond. Diamond and Related Materials, 8(10), 1831-1833.