MOSFETs on polished surfaces of polycrystalline diamond

K. Kitatani, H. Umezawa, K. Tsugawa, K. Ueyama, T. Ishikura, S. Yamashita, H. Kawarada

研究成果: Article

15 引用 （Scopus）

抜粋

MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.

元の言語English
ページ（範囲）1831-1833
ページ数3
ジャーナルDiamond and Related Materials
巻8
発行部数10
DOI
出版物ステータスPublished - 1999 10

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Chemistry(all)
  • Mechanical Engineering
  • Materials Chemistry
  • Electrical and Electronic Engineering

文献にアクセス

フィンガープリント MOSFETs on polished surfaces of polycrystalline diamond' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

    • これを引用

    Kitatani, K., Umezawa, H., Tsugawa, K., Ueyama, K., Ishikura, T., Yamashita, S., & Kawarada, H. (1999). MOSFETs on polished surfaces of polycrystalline diamond. Diamond and Related Materials, 8(10), 1831-1833. https://doi.org/10.1016/S0925-9635(99)00121-1