@article{be725ee2d9c34e638669cb1007d14c1e,
title = "MOSFETs on polished surfaces of polycrystalline diamond",
abstract = "MOSFETs on polished polycrystalline diamond surfaces have been fabricated. The best transconductance is 1.0mS/mm. The breakdown voltages of these FETs are over 200V, comparable to those reported in homoepitaxial diamond MESFETs. A polycrystalline diamond FET is a candidate for sensors in hard environment, due to its feasibility in large-area wafers.",
keywords = "Diamond, Hydrogen-terminated, MOSFET, Polycrystalline",
author = "K. Kitatani and H. Umezawa and K. Tsugawa and K. Ueyama and T. Ishikura and S. Yamashita and H. Kawarada",
note = "Funding Information: The authors would like to thank N.Fujimori and S.Shikata of Sumitomo Electric Co. Ltd. for the supply of the high pressure synthetic Ib diamond substrates. This work has been supported in part by the Grant-in-aid for Scientific Research 09555103 from the Ministry of Education, Science and Culture of Japan. ",
year = "1999",
month = oct,
doi = "10.1016/S0925-9635(99)00121-1",
language = "English",
volume = "8",
pages = "1831--1833",
journal = "Diamond and Related Materials",
issn = "0925-9635",
publisher = "Elsevier BV",
number = "10",
}