MOVPE-GROWN InAs/InGaAs multiple-quantum-well lasers emitting at 2.33 μm

Tomonari Sato*, Manabu Mitsuhara, Takaaki Kakitsuka, Yasuhiro Kondo

*この研究の対応する著者

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

We achieved an emission wavelength of 2.33 μm in an InAs/InGaAs multiple-quantum-well (MQW) laser grown by metalorganic vapor phase epitaxy. MQWs with flat interfaces and good thermal stability were obtained by decreasing the growth temperature to 500°C. The PL peak wavelengths of the MQWs were controlled from 1.93 to 2.47 μn by changing the thickness of the InAs wells. For a broad-area laser, the threshold current density was 1.52 kA/cm2 and the output power was above 12 mW.

本文言語English
ホスト出版物のタイトルIPRM'07
ホスト出版物のサブタイトルIEEE 19th International Conference on Indium Phosphide and Related Materials - Conference Proceedings
ページ380-383
ページ数4
DOI
出版ステータスPublished - 2007 10 2
外部発表はい
イベントIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials - Matsue, Japan
継続期間: 2007 5 142007 5 18

出版物シリーズ

名前Conference Proceedings - International Conference on Indium Phosphide and Related Materials
ISSN(印刷版)1092-8669

Conference

ConferenceIPRM'07: IEEE 19th International Conference on Indium Phosphide and Related Materials
国/地域Japan
CityMatsue
Period07/5/1407/5/18

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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