MOVPE growth of strained InGaAsN/GaAs quantum wells

Hisao Saito*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

74 被引用数 (Scopus)

抄録

The strained In0.13Ga0.7As1-xNx (x = 0-0.01)/GaAs quantum wells (QWs) with 10 nm well thicknesses were grown by MOVPE at 500°C using dimethylhydrazine (DMHy) as the nitrogen source. The nitrogen was nonlinearly incorporated into the solid by increasing the partial pressure of DMHy in the vapor phase. The peak energy of photoluminescence (PL) was red-shifted by increasing the composition of nitrogen up to x =0.002 and showed a large band-gap bowing of - 82 eV. The as-grown In0.3Ga0.7As0.99N0.01 QW had a weak PL intensity of more than two orders of magnitude lower than that of In0.3Ga0.7As QW, but by annealing in a N2 atmosphere at 650°C, the PL intensity recovered and peaked at 1.26 μm at 10 K. The PL recovery seems to have been related to the depassivation of hydrogen. From a SIMS analysis, the as-grown In0.3Ga0.7As0.99N0.01 QW showed a hydrogen concentration as high as 6 × 1019 cm-3, but decreased to 2.5 × 1019 cm-3 after annealing in N2 for 1 h.

本文言語English
ページ(範囲)416-420
ページ数5
ジャーナルJournal of Crystal Growth
195
1-4
DOI
出版ステータスPublished - 1998 12月 15
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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