N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors for high power operation

T. Makimoto, K. Kumakura, N. Kobayashi

研究成果: Conference article査読

15 被引用数 (Scopus)

抄録

We have fabricated N-AlGaN/p-InGaN/n-GaN heterojunction bipolar transistors to evaluate their common-emitter current-voltage (I-V) characteristics at room temperature. The device has a Si-doped N-AlGaN emitter, a Mg-doped p-InGaN base, and a Si-doped n-GaN collector. The common-emitter I-V characteristics were observed up to a collector-emitter voltage of 70 V and a collector current of 14.5 mA. The breakdown voltage is as high as 100 V. The corresponding breakdown electric field is 2 × 106 V/cm, which is comparable to the expected one for GaN. This high breakdown electric field is ascribed to a less damaged p-InGaN and a wide bandgap of an n-GaN collector. Furthermore, the leakage path through the defects in InGaN layers is considered to be eliminated by filling them with wide bandgap AlGaN layers during the emitter growth.

本文言語English
ページ(範囲)95-98
ページ数4
ジャーナルPhysica Status Solidi C: Conferences
1
DOI
出版ステータスPublished - 2002 12 1
外部発表はい
イベント2nd International Workshop on Nitride Semiconductors, IWN 2002 - Aachen, Germany
継続期間: 2002 7 222002 7 25

ASJC Scopus subject areas

  • 凝縮系物理学

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