n-type control by sulfur ion implantation in homoepitaxial diamond films grown by chemical vapor deposition

Masataka Hasegawa, Daisuke Takeuchi, Sadanori Yamanaka, Masahiko Ogura, Hideyuki Watanabe, Naoto Kobayashi, Hideyo Okushi, Koji Kajimura

研究成果: Article査読

67 被引用数 (Scopus)

抄録

n-type control was achieved by sulfur-ion-implantation in homoepitaxial diamond (100) films grown by chemical vapor deposition (CVD) for the first time. Sulfur-implantation was carried out with energies of up to 400 keV at 400 °C. The activation energy of the conductivity was 0.19 - 0.33 eV depending on the conditions of ion implantation. A junction between this layer and a boron-doped p-type layer was fabricated by combining sulfur-implantation with gas-phase boron doping during CVD. The junction exhibited clear pn junction properties. The capacitance of the junction decreased with reverse bias voltage, which confirms that the depletion region of the junction was actually extended with the reverse bias voltage.

本文言語English
ジャーナルJapanese Journal of Applied Physics, Part 2: Letters
38
12 B
出版ステータスPublished - 1999
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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