Nano-device simulation from an atomistic view

N. Mori, G. Mil'Nikov, H. Minari, Y. Kamakura, T. Zushi, T. Watanabe, M. Uematsu, K. M. Itoh, S. Uno, H. Tsuchiya

研究成果: Conference contribution

9 被引用数 (Scopus)

抄録

Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.

本文言語English
ホスト出版物のタイトル2013 IEEE International Electron Devices Meeting, IEDM 2013
ページ5.1.1-5.1.4
DOI
出版ステータスPublished - 2013
イベント2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
継続期間: 2013 12 92013 12 11

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
国/地域United States
CityWashington, DC
Period13/12/913/12/11

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学
  • 材料化学

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