Nano-device simulation from an atomistic view

N. Mori, G. Mil'Nikov, H. Minari, Y. Kamakura, T. Zushi, T. Watanabe, M. Uematsu, K. M. Itoh, S. Uno, H. Tsuchiya

研究成果: Conference contribution

10 引用 (Scopus)

抜粋

Fluctuations of device characteristics due to random discrete dopant (RDD) distribution are numerically investigated in ultra-small Si nanowire transistors. Kinetic Monte Carlo process simulation is performed to obtain realistic RDD distributions, whose effects on the transport characteristics are then analyzed by using a non-equilibrium Green's function (NEGF) method. Fluctuations due to atomic disorder near the Si/SiO2 interface are also investigated by performing molecular dynamics oxidation simulation for realistic atomic structure models and NEGF device simulation for transport characteristics.

元の言語English
ホスト出版物のタイトル2013 IEEE International Electron Devices Meeting, IEDM 2013
ページ5.1.1-5.1.4
DOI
出版物ステータスPublished - 2013 12 1
イベント2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
継続期間: 2013 12 92013 12 11

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷物)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
United States
Washington, DC
期間13/12/913/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

フィンガープリント Nano-device simulation from an atomistic view' の研究トピックを掘り下げます。これらはともに一意のフィンガープリントを構成します。

  • これを引用

    Mori, N., Mil'Nikov, G., Minari, H., Kamakura, Y., Zushi, T., Watanabe, T., Uematsu, M., Itoh, K. M., Uno, S., & Tsuchiya, H. (2013). Nano-device simulation from an atomistic view. : 2013 IEEE International Electron Devices Meeting, IEDM 2013 (pp. 5.1.1-5.1.4). [6724564] (Technical Digest - International Electron Devices Meeting, IEDM). https://doi.org/10.1109/IEDM.2013.6724564