Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).
|ジャーナル||Materials Research Society Symposium - Proceedings|
|出版ステータス||Published - 2001|
|イベント||Nanotubes, Fullerenes, Nanostructured and Disordered Carbon - San Francisco, CA, United States|
継続期間: 2001 4月 17 → 2001 4月 20
ASJC Scopus subject areas