Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki, Tohru Fukuda, Hokuto Seo, Kenta Sugata, Tokishige Banno, Hitoshi Umezawa, Hiroshi Kawarada

研究成果: Conference article査読

2 被引用数 (Scopus)

抄録

Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).

本文言語English
ページ(範囲)W12.5.1-W12.5.5
ジャーナルMaterials Research Society Symposium - Proceedings
675
DOI
出版ステータスPublished - 2001
イベントNanotubes, Fullerenes, Nanostructured and Disordered Carbon - San Francisco, CA, United States
継続期間: 2001 4 172001 4 20

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

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