Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki; Tohru Fukuda; Hokuto Seo; Kenta Sugata; Tokishige Banno; Hitoshi Umezawa; Hiroshi Kawarada

doi:10.1557/proc-675-w12.5.1

Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

Minoru Tachiki^*, Tohru Fukuda, Hokuto Seo, Kenta Sugata, Tokishige Banno, Hitoshi Umezawa, Hiroshi Kawarada

^*この研究の対応する著者

基幹理工学部

研究成果: Conference article › 査読

2 被引用数 (Scopus)

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Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).

本文言語	English
ページ（範囲）	W12.5.1-W12.5.5
ジャーナル	Materials Research Society Symposium - Proceedings
巻	675
DOI	https://doi.org/10.1557/proc-675-w12.5.1
出版ステータス	Published - 2001
イベント	Nanotubes, Fullerenes, Nanostructured and Disordered Carbon - San Francisco, CA, United States 継続期間: 2001 4月 17 → 2001 4月 20

ASJC Scopus subject areas

材料科学（全般）
凝縮系物理学
材料力学
機械工学

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@article{c7765f43572e4031aa2c0ed1efe1c6ea,

title = "Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope",

abstract = "Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).",

author = "Minoru Tachiki and Tohru Fukuda and Hokuto Seo and Kenta Sugata and Tokishige Banno and Hitoshi Umezawa and Hiroshi Kawarada",

year = "2001",

doi = "10.1557/proc-675-w12.5.1",

language = "English",

volume = "675",

pages = "W12.5.1--W12.5.5",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Nanotubes, Fullerenes, Nanostructured and Disordered Carbon ; Conference date: 17-04-2001 Through 20-04-2001",

}

TY - JOUR

T1 - Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

AU - Tachiki, Minoru

AU - Fukuda, Tohru

AU - Seo, Hokuto

AU - Sugata, Kenta

AU - Banno, Tokishige

AU - Umezawa, Hitoshi

AU - Kawarada, Hiroshi

PY - 2001

Y1 - 2001

N2 - Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).

AB - Nanofabrication on a hydrogen-terminated diamond surface is performed using an atomic force microscope (AFM) anodization. Locally insulated areas less than 30 nm are successfully obtained. Side-gated field effect transistors (FETs) are fabricated using the local anodization, and they operate successfully. Single hole transistors composed of one side-gated FET and two tunneling junctions are also fabricated and operate at liquid nitrogen temperature (77 K).

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UR - http://www.scopus.com/inward/citedby.url?scp=0035559953&partnerID=8YFLogxK

U2 - 10.1557/proc-675-w12.5.1

DO - 10.1557/proc-675-w12.5.1

M3 - Conference article

AN - SCOPUS:0035559953

SN - 0272-9172

VL - 675

SP - W12.5.1-W12.5.5

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Nanotubes, Fullerenes, Nanostructured and Disordered Carbon

Y2 - 17 April 2001 through 20 April 2001

ER -

Nanodevice fabrication on hydrogenated diamond surface using atomic force microscope

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