Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE

Makoto Kasu*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

1 被引用数 (Scopus)

抄録

A selective-area GaAs growth technique in a nanometer scale has been demonstrated by a combination of nitrogen (N)-passivation mask formation, ultra-high-vacuum scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular beam epitaxy (MOMBE). GaAs(001) surfaces were passivated with N radicals dissociated from N2 molecules, and were modified by STM in a nanometer scale, and on the surface GaAs nanostructures were grown using trimethylgallium and tertiarybutylarsine. Uniform 6 nm-high, 50 × 50 nm2 dots were formed on the STM-modified areas, where the underlying GaAs layer appeared.

本文言語English
ページ(範囲)589-591
ページ数3
ジャーナルJournal of Crystal Growth
173
3-4
DOI
出版ステータスPublished - 1997 4月
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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