TY - JOUR
T1 - Nanometer-scale selective-area GaAs growth on nitrogen-passivated surfaces using STM and MOMBE
AU - Kasu, Makoto
AU - Makimoto, Toshiki
AU - Kobayashi, Naoki
PY - 1997/4
Y1 - 1997/4
N2 - A selective-area GaAs growth technique in a nanometer scale has been demonstrated by a combination of nitrogen (N)-passivation mask formation, ultra-high-vacuum scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular beam epitaxy (MOMBE). GaAs(001) surfaces were passivated with N radicals dissociated from N2 molecules, and were modified by STM in a nanometer scale, and on the surface GaAs nanostructures were grown using trimethylgallium and tertiarybutylarsine. Uniform 6 nm-high, 50 × 50 nm2 dots were formed on the STM-modified areas, where the underlying GaAs layer appeared.
AB - A selective-area GaAs growth technique in a nanometer scale has been demonstrated by a combination of nitrogen (N)-passivation mask formation, ultra-high-vacuum scanning-tunneling-microscopy (STM) pattern modification, and metalorganic molecular beam epitaxy (MOMBE). GaAs(001) surfaces were passivated with N radicals dissociated from N2 molecules, and were modified by STM in a nanometer scale, and on the surface GaAs nanostructures were grown using trimethylgallium and tertiarybutylarsine. Uniform 6 nm-high, 50 × 50 nm2 dots were formed on the STM-modified areas, where the underlying GaAs layer appeared.
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U2 - 10.1016/S0022-0248(96)01096-2
DO - 10.1016/S0022-0248(96)01096-2
M3 - Article
AN - SCOPUS:0031120331
VL - 173
SP - 589
EP - 591
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
SN - 0022-0248
IS - 3-4
ER -