Nanopatterning and fabrication of memory devices from layer-by-layer poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) ultrathin films

Guoqian Jiang, Akira Baba, Rigoberto Advincula*

*この研究の対応する著者

研究成果: Article査読

51 被引用数 (Scopus)

抄録

A write-read-erasable memory device was fabricated on layer-by-layer (LbL) ultrathin films prepared from poly(3,4-ethylenedioxythiophene)-poly(styrene sulfonate) (PEDOT-PSS) and poly(diallyldimethylammonium chloride) (PDDA). By use of current-sensing atomic force microscopy (CS-AFM), nanopatterns were formed by applying a bias voltage between a conductive tip (Pt-coated Si 3N4 cantilever) in contact with the polymer film and gold substrate. The dependence of the nanopatterns on film thickness, applied bias, and writing speed was studied. Moreover, the height of the patterns was 3-5 times higher than the original thickness of the films, opening the possibility for three-dimensional nanopatterning. The ability of the patterns to be erased after nanowriting was also investigated. By comparing the I-V characteristics under ambient conditions and under N2 environment, a joule-heating activated, water meniscus-assisted anion doping mechanism for the nanopatterning process was determined. Write-read-erase memory device capability was demonstrated on the nanopatterns.

本文言語English
ページ(範囲)817-825
ページ数9
ジャーナルLangmuir
23
2
DOI
出版ステータスPublished - 2007 1月 16
外部発表はい

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 表面および界面
  • 分光学
  • 電気化学

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