Nanoscale patterning and selective growth of GaAs surfaces by ultra-high vacuum scanning tunneling microscopy

Makoto Kasu*, Toshiki Makimoto, Naoki Kobayashi

*この研究の対応する著者

研究成果査読

2 被引用数 (Scopus)

抄録

After amorphous-like N-passivated GaAs surfaces with a low defect density are obtained as a mask layer for selective growth, nanometer scale patterning of the surfaces is achieved using ultra-high vacuum scanning tunneling microscopy to selectively depassivate surface N atoms. After patterning, GaAs dots with well-controlled size (typically 6 nm high and 50 x 50 nm2) can be successfully grown using trimethylgallium and tertiarybutylarsine in the specific area where the underlying GaAs layer appeared.

本文言語English
ページ(範囲)3821-3826
ページ数6
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
36
6 SUPPL. B
出版ステータスPublished - 1997 6 1
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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