Nanoscale selective-area GaAs growth by nitrogen surface passivation and STM surface modification

Makoto Kasu, Toshiki Makimoto, Naoki Kobayashi

研究成果: Article査読

抄録

A new selective-area GaAs growth technique on a nanometer scale is demonstrated by a combination of nitrogen (N) -passivation mask formation, scanning tunneling microscopy (STM) pattern modification, and metalorganic molecular beam epitaxy. GaAs (001) surfaces are passivated with N radicals dissociated from N2 molecules, and are modified by STM on a nanometer scale. GaAs nanostructures are grown on the surfaces using trimethylgallium and tertiarybutylarsenic. An array of uniform 6-nm-high and 50 × 50-nm2 dots was formed on the STM-modified areas. The advantages of the technique are that size-controlled nanostructures can be fabricated in specific positions and that the nanostructures formed are free from contamination because all processes are performed in a vacuum.

本文言語English
ページ(範囲)603-608
ページ数6
ジャーナルShinku/Journal of the Vacuum Society of Japan
39
11
DOI
出版ステータスPublished - 1996
外部発表はい

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学

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