Nanosecond fast switching processes observed in gapless-type, Ta2O5r-based atomic switches

Tohru Tsuruoka, Tsuyoshi Hasegawa, Masakazu Aono

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

The switching speed of a Cu/Ta2O5/Pt atomic switch between a high-resistance (OFF) state and a low-resistance (ON) state was evaluated by transient current measurements under the application of a short voltage pulse. It was found that the SET time from the OFF state to the ON state decreased as low as 1 ns, and the RESET time from the ON state to the OFF state reached a few ns using moderate pulse amplitudes. The switching time depends strongly on the pulse amplitude and the cell resistance before applying a voltage pulse. This observation indicates that oxide-based atomic switches hold potential for fast-switching memory applications. It was also found that Cu nucleation on the Pt electrode is likely to the rate-limiting process determining the SET time and the REST time appears to be preferentially determined by thermochemical reaction.

本文言語English
ホスト出版物のタイトルMaterials and Technology for Nonvolatile Memories
編集者Guohan Hu, Eisuke Tokumitsu, Yoshihisa Fujisaki, Panagiotis Dimitrakis
出版社Materials Research Society
ページ35-40
ページ数6
ISBN(電子版)9781605117065
DOI
出版ステータスPublished - 2015
外部発表はい
イベント2014 MRS Fall Meeting - Boston, United States
継続期間: 2014 11月 302014 12月 5

出版物シリーズ

名前Materials Research Society Symposium Proceedings
1729
ISSN(印刷版)0272-9172

Other

Other2014 MRS Fall Meeting
国/地域United States
CityBoston
Period14/11/3014/12/5

ASJC Scopus subject areas

  • 材料科学(全般)
  • 凝縮系物理学
  • 材料力学
  • 機械工学

フィンガープリント

「Nanosecond fast switching processes observed in gapless-type, Ta2O5r-based atomic switches」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル