Narrow Spectral Linewidth of MBE-Grown GalnAs / AlInAs MQW Lasers in the 1.55 μm Range

Yuichi Matsushima, Katsuyuki Utaka, Kazuo Sakai

研究成果: Article

12 引用 (Scopus)

抜粋

GalnAs-AlInAs multiquantum well (MQW) lasers were successfully fabricated by molecular beam epitaxy (MBE) on InP substrates. Room-temperature CW operation of ridge-type stripe MQW lasers was confirmed in the 1.55 μm wavelength range. Spectral behaviors of the MQW lasers were investigated from the standpoint of the linewidth and chirping characteristics for the first time. An obtained minimum value of the spectral linewidth was as narrow as 2.5 MHz at an output power of 10 mW in a diode with a cavity length of 750 μm. Small chirping characteristics were also confirmed, in which 1.5 A chirp width was observed at 1 GHz direct modulation with a modulation depth of 67 percent.

元の言語English
ページ(範囲)1376-1380
ページ数5
ジャーナルIEEE Journal of Quantum Electronics
25
発行部数6
DOI
出版物ステータスPublished - 1989 1 1

    フィンガープリント

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

これを引用