Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots

Atsushi Tackeuchi, Yoshiaki Nakata, Shunichi Muto, Yoshihiro Sugiyama, Tsuguo Inata, Naoki Yokoyama

研究成果: Article

50 引用 (Scopus)

抄録

We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

元の言語English
ページ（範囲）L405-L407
ジャーナルJapanese Journal of Applied Physics
巻34
発行部数4
DOI
出版物ステータスPublished - 1995
外部発表Yes

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Semiconductor quantum dots
Photoluminescence
quantum dots
photoluminescence
room temperature
Temperature
Electron energy levels
Semiconductor quantum wells
tunnels
Tunnels
quantum wells
energy

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

これを引用

Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots. / Tackeuchi, Atsushi; Nakata, Yoshiaki; Muto, Shunichi; Sugiyama, Yoshihiro; Inata, Tsuguo; Yokoyama, Naoki.

：: Japanese Journal of Applied Physics, 巻 34, 番号 4, 1995, p. L405-L407.

研究成果: Article

Tackeuchi, A, Nakata, Y, Muto, S, Sugiyama, Y, Inata, T & Yokoyama, N 1995, 'Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots', Japanese Journal of Applied Physics, 巻. 34, 番号 4, pp. L405-L407. https://doi.org/10.1143/JJAP.34.L405
Tackeuchi A, Nakata Y, Muto S, Sugiyama Y, Inata T, Yokoyama N. Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots. Japanese Journal of Applied Physics. 1995;34(4):L405-L407. https://doi.org/10.1143/JJAP.34.L405
Tackeuchi, Atsushi ; Nakata, Yoshiaki ; Muto, Shunichi ; Sugiyama, Yoshihiro ; Inata, Tsuguo ; Yokoyama, Naoki. / Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots. ：: Japanese Journal of Applied Physics. 1995 ; 巻 34, 番号 4. pp. L405-L407.
@article{81d4f9eced264d98ae39a057557121b2,
title = "Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots",
abstract = "We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.",
keywords = "1.3 pm, Photoluminescence, Quantum box, Quantum dot, Tunnel",
author = "Atsushi Tackeuchi and Yoshiaki Nakata and Shunichi Muto and Yoshihiro Sugiyama and Tsuguo Inata and Naoki Yokoyama",
year = "1995",
doi = "10.1143/JJAP.34.L405",
language = "English",
volume = "34",
pages = "L405--L407",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "4",

}

TY - JOUR

T1 - Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots

AU - Tackeuchi, Atsushi

AU - Nakata, Yoshiaki

AU - Muto, Shunichi

AU - Sugiyama, Yoshihiro

AU - Inata, Tsuguo

AU - Yokoyama, Naoki

PY - 1995

Y1 - 1995

N2 - We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

AB - We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

KW - 1.3 pm

KW - Photoluminescence

KW - Quantum box

KW - Quantum dot

KW - Tunnel

UR - http://www.scopus.com/inward/record.url?scp=24544447747&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=24544447747&partnerID=8YFLogxK

U2 - 10.1143/JJAP.34.L405

DO - 10.1143/JJAP.34.L405

M3 - Article

AN - SCOPUS:24544447747

VL - 34

SP - L405-L407

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 4

ER -

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