Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots

Atsushi Tackeuchi; Yoshiaki Nakata; Shunichi Muto; Yoshihiro Sugiyama; Tsuguo Inata; Naoki Yokoyama

doi:10.1143/JJAP.34.L405

Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots

Atsushi Tackeuchi, Yoshiaki Nakata, Shunichi Muto, Yoshihiro Sugiyama, Tsuguo Inata, Naoki Yokoyama

研究成果: Article › 査読

52 被引用数 (Scopus)

抄録

We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

本文言語	English
ページ（範囲）	L405-L407
ジャーナル	Japanese journal of applied physics
巻	34
号	4
DOI	https://doi.org/10.1143/JJAP.34.L405
出版ステータス	Published - 1995 4月
外部発表	はい

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/JJAP.34.L405

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title = "Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots",

abstract = "We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.",

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author = "Atsushi Tackeuchi and Yoshiaki Nakata and Shunichi Muto and Yoshihiro Sugiyama and Tsuguo Inata and Naoki Yokoyama",

year = "1995",

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doi = "10.1143/JJAP.34.L405",

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T1 - Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots

AU - Tackeuchi, Atsushi

AU - Nakata, Yoshiaki

AU - Muto, Shunichi

AU - Sugiyama, Yoshihiro

AU - Inata, Tsuguo

AU - Yokoyama, Naoki

PY - 1995/4

Y1 - 1995/4

N2 - We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

AB - We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

KW - 1.3 pm

KW - Photoluminescence

KW - Quantum box

KW - Quantum dot

KW - Tunnel

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JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

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Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots

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