Near-1.3-^m high-intensity photoluminescence at room temperature by inas/gaas multi-coupled quantum dots

Atsushi Tackeuchi, Yoshiaki Nakata, Shunichi Muto, Yoshihiro Sugiyama, Tsuguo Inata, Naoki Yokoyama

研究成果: Article査読

51 被引用数 (Scopus)

抄録

We propose a new quantum dot system called multi-coupled quantum dots. In this system, since quantum dots couple with adjacent dots, the photoexcited carriers tunnel into the larger quantum dots which have lower energy states. This energy relaxation results in narrower and stronger photoluminescence than with conventional quantum dots. InAs/GaAs self-organized multi-coupled quantum dots show strong photoluminescence near 1.3 /дп at room temperature, whose intensity is as large as in the well-known highly efficient InGaAs/GaAs quantum wells.

本文言語English
ページ(範囲)L405-L407
ジャーナルJapanese journal of applied physics
34
4
DOI
出版ステータスPublished - 1995 4
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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