Near EF electronic structure of heavily boron-doped superconducting diamond

H. Okazaki*, T. Yokoya, J. Nakamura, N. Yamada, T. Nakamura, T. Muro, Y. Tamenori, T. Matsushita, Y. Takata, T. Tokushima, S. Shin, Y. Takano, M. Nagao, T. Takenouchi, H. Kawarada, T. Oguchi

*この研究の対応する著者

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We have performed soft X-ray angle-resolved photoemission spectroscopy (SXARPES) of a heavily boron-doped superconducting diamond film (Tc=7.2 K) in order to study the electronic structure near the Fermi level (EF). Careful determination of measured momentum space that across Γ point in the Brillouin zone (BZ) and increase of an energy resolution provide further spectroscopic evidence that EF is located at the highly dispersive diamond-like bands, indicating that holes at the top of the diamond-like valence band play an essential role for the conducting properties of the heavily boron-doped superconducting diamond for this boron-doping region (effective carrier concentration of 1.6%). The SXARPES intensities at EF were also mapped out over BZ to obtain experimental Fermi surface sheets and compared with calculations. Crown

本文言語English
ページ(範囲)2978-2981
ページ数4
ジャーナルJournal of Physics and Chemistry of Solids
69
12
DOI
出版ステータスPublished - 2008 12月

ASJC Scopus subject areas

  • 化学 (全般)
  • 材料科学(全般)
  • 凝縮系物理学

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