New applications of a sinusoidally driven InGaAsP electroabsorption modulator to in-line optical gates with ASE noise reduction effect

Masatoshi Suzuki*, Hideaki Tanaka, Noboru Edagawa, Yuichi Matsushima

*この研究の対応する著者

研究成果: Article査読

36 被引用数 (Scopus)

抄録

This paper proposes new applications of a sinusoidally driven InGaAsP electroabsorption modulator to an inline optical gate for a 2R (reshape and retiming) repeater in optical amplifier systems, an n:1 optical demultiplexer in time division multiplexing systems, and an optical switching. Small polarization dependence of the modulator is essentially important for in-line use. By utilizing the monotonic increase of the extinction ratio with increasing the applied voltage, the electroabsorption modulator driven by large-signal sinusoidal voltage can produce a time domain square-shaped gate function with variable gate width. Furthermore, amplified spontaneous emission noise of optical amplifier systems can be reduced in both time and wavelength domains at off-state of the modulator, due to a noninterferometric wide wavelength operation of the modulator. Experimental results for a 2R repeater, an n:1 (n = 4, 8) optical demultiplexer, and optical gates for switching are also demonstrated for the first time at over 10-Gb/s repetition rate.

本文言語English
ページ(範囲)1912-1918
ページ数7
ジャーナルJournal of Lightwave Technology
10
12
DOI
出版ステータスPublished - 1992 12月
外部発表はい

ASJC Scopus subject areas

  • 電子工学および電気工学
  • 原子分子物理学および光学

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