NEW ARCHITECTURE OF NVRAM.

Yasushi Terada, Kazuo Kobayashi, Takeshi Nakayama, Hideaki Arima, Tsutomu Yoshihara

研究成果: Conference contribution

1 引用 (Scopus)

抜粋

A cell concept appropriate to nonvolatile RAMs is introduced. It is based on the FLOTOX-type EEPROM (electrically erasable programmable ROM) cell to work as a dynamic RAM cell. Simulation and test device measurement results are presented.

元の言語English
ホスト出版物のタイトルDigest of Technical Papers - Symposium on VLSI Technology
出版者Japan Soc of Applied Physics
ページ51-52
ページ数2
出版物ステータスPublished - 1987
外部発表Yes
イベントDig Tech Pap Symp VLSI Technol 1987 - Karuizawa, Jpn
継続期間: 1987 5 221987 5 23

Other

OtherDig Tech Pap Symp VLSI Technol 1987
Karuizawa, Jpn
期間87/5/2287/5/23

    フィンガープリント

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

これを引用

Terada, Y., Kobayashi, K., Nakayama, T., Arima, H., & Yoshihara, T. (1987). NEW ARCHITECTURE OF NVRAM.Digest of Technical Papers - Symposium on VLSI Technology (pp. 51-52). Japan Soc of Applied Physics.