TY - JOUR
T1 - New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond
AU - Oda, H.
AU - Ueno, S.
AU - Inuishi, M.
AU - Tsubouchi, N.
PY - 1994/12/1
Y1 - 1994/12/1
N2 - Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.
AB - Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.
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M3 - Conference article
AN - SCOPUS:0028594656
SP - 69
EP - 70
JO - Digest of Technical Papers - Symposium on VLSI Technology
JF - Digest of Technical Papers - Symposium on VLSI Technology
SN - 0743-1562
T2 - Proceedings of the 1994 Symposium on VLSI Technology
Y2 - 7 June 1994 through 9 June 1994
ER -