New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond

H. Oda; S. Ueno; M. Inuishi; N. Tsubouchi

New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond

H. Oda, S. Ueno, M. Inuishi, N. Tsubouchi

研究成果: Conference article › 査読

抄録

Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.

本文言語	English
ページ（範囲）	69-70
ページ数	2
ジャーナル	Digest of Technical Papers - Symposium on VLSI Technology
出版ステータス	Published - 1994 12 1
外部発表	はい
イベント	Proceedings of the 1994 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 1994 6 7 → 1994 6 9

ASJC Scopus subject areas

Electrical and Electronic Engineering

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引用スタイル

@article{0a65dab04e9d499f975fcd716124df19,

title = "New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond",

abstract = "Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.",

author = "H. Oda and S. Ueno and M. Inuishi and N. Tsubouchi",

year = "1994",

month = dec,

day = "1",

language = "English",

pages = "69--70",

journal = "Digest of Technical Papers - Symposium on VLSI Technology",

issn = "0743-1562",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

note = "Proceedings of the 1994 Symposium on VLSI Technology ; Conference date: 07-06-1994 Through 09-06-1994",

}

TY - JOUR

T1 - New buried channel FLASH memory cell with symmetrical source/drain structure for 64Mbit or beyond

AU - Oda, H.

AU - Ueno, S.

AU - Inuishi, M.

AU - Tsubouchi, N.

PY - 1994/12/1

Y1 - 1994/12/1

N2 - Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.

AB - Using the buried channel NMOSFET, the symmetrical source/drain structure for FLASH memory cell is developed. More channel hot electrons can be generated by using buried channel type NMOSFET, comparing with a conventional asymmetrical device. The result improved the injection efficiency of hot electrons, where high programming speed can be achieved.

UR - http://www.scopus.com/inward/record.url?scp=0028594656&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028594656&partnerID=8YFLogxK

M3 - Conference article

AN - SCOPUS:0028594656

SP - 69

EP - 70

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

T2 - Proceedings of the 1994 Symposium on VLSI Technology

Y2 - 7 June 1994 through 9 June 1994

ER -