New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating

H. Itoh; Y. Tsunemine; A. Yutani; T. Okudaira; K. Kashihara; M. Inuishi; M. Yamamuka; T. Kawahara; T. Horikawa; T. Ohmori; S. Satoh

New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating

H. Itoh^*, Y. Tsunemine, A. Yutani, T. Okudaira, K. Kashihara, M. Inuishi, M. Yamamuka, T. Kawahara, T. Horikawa, T. Ohmori, S. Satoh

^*この研究の対応する著者

研究成果: Conference article › 査読

4 被引用数 (Scopus)

抄録

A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.

本文言語	English
ページ（範囲）	106-107
ページ数	2
ジャーナル	Digest of Technical Papers - Symposium on VLSI Technology
出版ステータス	Published - 2000 1 1
外部発表	はい
イベント	2000 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 2000 6 13 → 2000 6 15

ASJC Scopus subject areas

電子工学および電気工学

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引用スタイル

New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating. / Itoh, H.; Tsunemine, Y.; Yutani, A.; Okudaira, T.; Kashihara, K.; Inuishi, M.; Yamamuka, M.; Kawahara, T.; Horikawa, T.; Ohmori, T.; Satoh, S.

In: Digest of Technical Papers - Symposium on VLSI Technology, 01.01.2000, p. 106-107.

研究成果: Conference article › 査読

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title = "New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating",

abstract = "A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.",

author = "H. Itoh and Y. Tsunemine and A. Yutani and T. Okudaira and K. Kashihara and M. Inuishi and M. Yamamuka and T. Kawahara and T. Horikawa and T. Ohmori and S. Satoh",

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journal = "Digest of Technical Papers - Symposium on VLSI Technology",

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T1 - New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating

AU - Itoh, H.

AU - Tsunemine, Y.

AU - Yutani, A.

AU - Okudaira, T.

AU - Kashihara, K.

AU - Inuishi, M.

AU - Yamamuka, M.

AU - Kawahara, T.

AU - Horikawa, T.

AU - Ohmori, T.

AU - Satoh, S.

PY - 2000/1/1

Y1 - 2000/1/1

N2 - A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.

AB - A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.

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M3 - Conference article

AN - SCOPUS:0033683019

SP - 106

EP - 107

JO - Digest of Technical Papers - Symposium on VLSI Technology

JF - Digest of Technical Papers - Symposium on VLSI Technology

SN - 0743-1562

T2 - 2000 Symposium on VLSI Technology

Y2 - 13 June 2000 through 15 June 2000

ER -

New cell technology for the scalable BST capacitor using damascene-formed pedestal electrode with a [Pt-Ir] alloy coating

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