抄録
A scalabale pedestal cell technology has been successfully developed for the BST capacitor by introducing the damascene scheme into the pedestal electrode formation and by employing [Pt-Ir] alloy for coating the pedestal electrode. With a PVD-BST liner as the blanket nucleating layer and as the barrier layer against the destructive oxidant, the MOCVD-BST functions in prime condition on the storage node developed.
本文言語 | English |
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ページ(範囲) | 106-107 |
ページ数 | 2 |
ジャーナル | Digest of Technical Papers - Symposium on VLSI Technology |
出版ステータス | Published - 2000 |
外部発表 | はい |
イベント | 2000 Symposium on VLSI Technology - Honolulu, HI, USA 継続期間: 2000 6月 13 → 2000 6月 15 |
ASJC Scopus subject areas
- 電子工学および電気工学