We present a novel procedure for fabricating high-k nanodielectrics by using of perovskite nanosheet (Ca 2-xSr xNb 3O 10) as a building block. We synthesized Ca 2-xSr xNb 3O 10 nanosheets by delaminating layered perovskites (KCa 2-xSr xNb 3O 10), and fabricated multilayer nanofilms on atomically flat SrRuO 3and Pt substrates by Langmuir-Blodgett method. Various microscopy techniques showed highly ordered lamellar structures, and electron energy loss spectroscopy revealed no detectable interdiffusion and strains at the interface between the layers and substrate. These nanofilms showed both high dielectric constant (>200) and low leakage current (< 10 -7 A/cm 2) even in films less than 5 nm thick. Our work thus provides a new recipe for designing nanodielectrics desirable for future high-k devices.
|出版ステータス||Published - 2012|
|イベント||5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting - Seattle, WA, United States|
継続期間: 2012 5 6 → 2012 5 10
|Other||5th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 221st ECS Meeting|
|Period||12/5/6 → 12/5/10|
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