New formation process of plating thin films on several substrates by means of self-assembled monolayer (SAM) process

Tetsuya Osaka, Masahiro Yoshino

研究成果: Article

36 被引用数 (Scopus)

抄録

This review describes our recent works on the preparation of Ni-alloy films deposited by electroless deposition as a diffusion barrier layer for ultra large-scale integration (ULSI) interconnects by using an all-wet process. In this process, we create a novel wet fabrication process including a self-assembled monolayer (SAM) as an attachment technique between diffusion barrier layer and a substrate. Our proposal process was applied to the substrates of SiO2/Si and both organic (methyl silsesquioxane) and inorganic (hydrogen silsesquioxane) low-k dielectrics. The key technique of this proposed process is using SAM as a catalyst trapping layer. The Ni-alloy films such as NiB were deposited on catalyzed SiO2 or low-k substrates. The electrolessly deposited NiB films were found to exhibit sufficient thermal stability and an acceptable barrier property for preventing Cu diffusion into the SiO2 and low-k dielectrics.

本文言語English
ページ(範囲)271-277
ページ数7
ジャーナルElectrochimica Acta
53
2
DOI
出版ステータスPublished - 2007 12 1

ASJC Scopus subject areas

  • Chemical Engineering(all)
  • Electrochemistry

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