New in-situ optical probing method with an atomic scale resolution for thin film deposition: surface photo-interference (SPI)

Y. Nakamura*, T. Yamashita, M. Kobayashi, Y. Kato, A. Yoshikawa

*この研究の対応する著者

研究成果: Paper査読

抄録

A new in-situ optical probing method with an atomic-scale resolution in thin film deposition and/or heteroepitaxial growth is proposed in this paper. The new method is named surface photo-interference (SPI) because it is essentially concerned with a photo-interference in the deposited layer. The principle of the SPI is as follows; the complex refractive indices of the atomic or molecular layers, which alternately appear on top of the surface during film deposition and/or heteroepitaxy, greatly affect the total phase-shift of probing light during propagation in the epilayer, resulting in the change in the photo-interference signal intensity. The experimental setup of the method is very similar to that for another optical probing method called surface photo-absorption (SPA), but the principle is quite different between those two. One of the features of the SPI is that the experimental setup is quite simple and inexpensive though it is quite useful in real time monitoring of the thin film deposition.

本文言語English
ページ387-390
ページ数4
出版ステータスPublished - 1995
外部発表はい
イベントProceedings of the 1995 IEEE/CPMT 18th International Electronic Manufacturing Technology - Omiya, Jpn
継続期間: 1995 12 41995 12 6

Other

OtherProceedings of the 1995 IEEE/CPMT 18th International Electronic Manufacturing Technology
CityOmiya, Jpn
Period95/12/495/12/6

ASJC Scopus subject areas

  • 産業および生産工学
  • 電子工学および電気工学

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