抄録
A new in-situ optical probing method with an atomic-scale resolution in thin film deposition and/or heteroepitaxial growth is proposed in this paper. The new method is named surface photo-interference (SPI) because it is essentially concerned with a photo-interference in the deposited layer. The principle of the SPI is as follows; the complex refractive indices of the atomic or molecular layers, which alternately appear on top of the surface during film deposition and/or heteroepitaxy, greatly affect the total phase-shift of probing light during propagation in the epilayer, resulting in the change in the photo-interference signal intensity. The experimental setup of the method is very similar to that for another optical probing method called surface photo-absorption (SPA), but the principle is quite different between those two. One of the features of the SPI is that the experimental setup is quite simple and inexpensive though it is quite useful in real time monitoring of the thin film deposition.
| 本文言語 | English |
|---|---|
| ページ | 387-390 |
| ページ数 | 4 |
| 出版ステータス | Published - 1995 12 1 |
| 外部発表 | はい |
| イベント | Proceedings of the 1995 IEEE/CPMT 18th International Electronic Manufacturing Technology - Omiya, Jpn 継続期間: 1995 12 4 → 1995 12 6 |
Other
| Other | Proceedings of the 1995 IEEE/CPMT 18th International Electronic Manufacturing Technology |
|---|---|
| City | Omiya, Jpn |
| Period | 95/12/4 → 95/12/6 |
ASJC Scopus subject areas
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering