New measurement method of micro defects near the surface of Si wafers; optical shallow defect analyzer (OSDA)

Kazuo Takeda*, Hidetsugu Ishida, Atsushi Hiraiwa

*この研究の対応する著者

研究成果: Conference contribution

7 被引用数 (Scopus)

抄録

To inspect quality of the surface region (the depth < 0.5μm) of Si wafer, where devices are to be fabricated, a new measurement method named Optical Shallow Defect Analyzer (OSDA) is developed. This method is based on light scattering at two wavelengths having different penetration depths in silicon. The system measures the depth distribution and the size distribution of defects near the surface by comparing intensities of the two scattered lights. The depth resolution of 0.1 μm, the high measuring throughput (total 6 inches φ surface area/1hr) and the minimum detectable defect size of 20 nm are achieved. The OSDA is a powerful measurement system for nondestructive quality check of silicon wafers. We first present the data of epitaxial grown-in defects in μm order thickness epitaxial layers about the defect densities, the size distribution and the depth distribution.

本文言語English
ホスト出版物のタイトルMaterials Research Society Symposium - Proceedings
編集者J. Michel, T. Kennedy, K. Wada, K. Thonke
出版社Materials Research Society
ページ37-42
ページ数6
442
出版ステータスPublished - 1997
外部発表はい
イベントProceedings of the 1996 MRS Fall Meeting - Boston, MA, USA
継続期間: 1996 12月 21996 12月 6

Other

OtherProceedings of the 1996 MRS Fall Meeting
CityBoston, MA, USA
Period96/12/296/12/6

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料

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