New p-mosfet hot-carrier degradation model for bi-directional operation

Satoshi Shimizu, Motoaki Tanizawa, Shigeru Kusunoki, Masahide Inuishi, Natsuro Tsubouchi

研究成果: Article査読

2 被引用数 (Scopus)

抄録

It has been recognized that the building in reliability for hot-carrier is important in submicrometer p- MOSFET’s as well as n-MOSFET’s for use in the design of ULSI’s. Therefore in this paper, we introduce a new hot-carrier degradation model of p-MOSFET’s for bi-directional operation, aiming at constructing a new reliability simulator to cope with various operation modes. This model is based on the trap-induced barrier lowering (TIBL), the channel length modulation (CLM) due to electron traps in the oxide, and the mobility modulation (MM) due to interface state generation. By extracting these physically related parameters from transistor characteristics after hot-carrier injection in addition to extracting transistor model parameters before the injection, the hot-carrier degradation can be predicted not only in the linear and saturation regions but also in the forward and reverse operation modes.

本文言語English
ページ(範囲)889-894
ページ数6
ジャーナルJapanese journal of applied physics
34
2S
DOI
出版ステータスPublished - 1995 2
外部発表はい

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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