New photonic device integration by selective‐area MOVPE and its application to optical modulator/laser integration (invited paper)

M. Aoki*, M. Suzuki, T. Taniwatari, H. Sano, T. Kawano

*この研究の対応する著者

研究成果: Article査読

13 被引用数 (Scopus)

抄録

This article describes a novel fabrication technology for photonic integrated circuits (PICs) that easily produces a smooth and high‐quality waveguide coupling between interconnected guided‐wave elements. This technique is based on the in‐plane quantum energy control selective area metal‐organic vapor‐phase epitaxy of multiple‐quantum‐well (MQW) structures. Good local quantum energy control over a very wide range is shown for simultaneously grown MQW crystals. Moreover, the crystal quality, well/barrier heterointerface, and flatness and uniformity of these selectively grown MQW crystals are bound to be as good as those of normally grown crystals. This technique is applied to an electroabsorption modulator/distributed feedback laser integrated device. Superior device performance, including a low threshold and high‐efficiency lasing properties, as well as high‐speed, low‐drive‐voltage, and low‐chirp modulator characteristics are attained due to improved optical coupling, easy fabrication, and sufficient crystal quality of selectively grown MQW structures. 2.5 Gbit/s penalty‐free data transmission is demonstrated over an 80‐km normal single‐mode fiber, which, combined with long‐term device reliability, makes this integration technique more attractive for practical fabrication of semiconductor PICs. © 1994 John Wiley & Sons, Inc.

本文言語English
ページ(範囲)132-139
ページ数8
ジャーナルMicrowave and Optical Technology Letters
7
3
DOI
出版ステータスPublished - 1994 2 20
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 原子分子物理学および光学
  • 凝縮系物理学
  • 電子工学および電気工学

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