A new type heterostructure avalanche photodiode (HAPD) is proposed and successfully fabricated by liquid phase epitaxy and Zn-diffusion. The HAPD has been made from a successively grown wafer which consists of In//0//. //5//3Ga//0//. //4//7As light absorption layer, InGaAsP buffer layers and InP avalanche multiplication layer on n-InP substrate. Dark current density of 1 multiplied by 10** minus **4Acm** minus **2 at 0. 9 V//B is achieved. When illuminating with 1. 15 mu m light, the diode has a maximum multiplication gain of 880 and an external quantum efficiency of 40%. The quantum efficiency is markedly improved than that of previously reported HAPD.
|ジャーナル||Electron device letters|
|出版ステータス||Published - 1981 7|
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