Ni Impurity Effect on the Transport Properties and Carrier Concentration of Bi2212

Yuta Kiguchi*, Takuya Nakazawa, Azusa Matsuda

*この研究の対応する著者

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

In typical hole-doped high-Tc cuprates, the optimum doping is achieved at the doping level p ∼ 0.16 (= popt). However impurity dopings sometimes alters popt value. In this sense, popt ∼ 0.16 is thought not to be universal. Here, we studied the doping dependence of Tc and some transport characteristics for several Ni impurity doped Bi2Sr2CaCu2O8+δ single crystals. Doping levels were precisely determined by thermoelectric measurements and oxygen contents δ. We found that 1. Ni valence is almost same as Cu, 2. popt shifts toward higher doping, 3. pseudogap opening temperature T is not affected by Ni impurity. The results are consistent with the model that the shift in popt is due to the doping dependent pair breaking effect. This means that the shift is superficial and the essential universality popt ∼ 0.16 is impurity doped regime.

本文言語English
ページ(範囲)54-57
ページ数4
ジャーナルPhysics Procedia
58
DOI
出版ステータスPublished - 2014
イベント26th International Symposium on Superconductivity, ISS 2013 - Tokyo, Japan
継続期間: 2013 11 182013 11 20

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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