Nickel deposition behavior on n-type silicon wafer for fabrication of minute nickel dots

Nao Takano, Daisuke Niwa, Taro Yamada, Tetsuya Osaka

研究成果: Conference article査読

43 被引用数 (Scopus)

抄録

The present study is a part of our systematic development of mass-scale production processes of nanometer-scale arrays of metal dots on silicon wafer surfaces. Metallic Ni was deposited onto Si(100) wafer surfaces electrolessly or galvanostatically, for surveying appropriate methods for formation of minute structures. Within an electroless bath of simple NiSO4-(NH4)2SO4 solution, metallic Ni was deposited, accompanied by the oxidation of the Si surface. Wet pretreatment of the Si surfaces in HPM (HCl and H2O2 mixture) or in ethanol drastically improved the uniformity of Ni layer and the rate of deposition. The electrolytic deposition with applying a potential at the Si wafer resulted in formation of Ni deposit which were easily peeled off. Based on the knowledge obtained, a two-dimensional array of minute Ni dots (diameter ca. 270 nm) was successfully fabricated.

本文言語English
ページ(範囲)3263-3268
ページ数6
ジャーナルElectrochimica Acta
45
20
DOI
出版ステータスPublished - 2000 6 23
イベント50st ISE Meeting: Electrochemical Materials Science - Pavia, Italy
継続期間: 1999 9 51999 9 10

ASJC Scopus subject areas

  • 化学工学(全般)
  • 電気化学

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