Nickel electroless deposition process on chemically pretreated Si(100) wafers in aqueous alkaline solution

Daisuke Niwa, Nao Takano, Taro Yamada, Tetsuya Osaka*

*この研究の対応する著者

研究成果査読

34 被引用数 (Scopus)

抄録

Pretreating Si wafer surfaces with hydrochloric acid and hydrogen peroxide mixture (HPM) or ethanol was found to enhance the reactivity of chemical Ni deposition on Si(100) wafers in a simple bath of NiSO4-(NH4)2SO4 at pH 9.0. This phenomenon was identified as the acceleration of anodic reaction involved in chemical Ni deposition reaction on Si wafer surfaces, namely oxidation process of surface Si. Just after immersing into the alkaline bath, a reactive surface where oxidation reaction of Si was accelerated was formed on Si wafer surface with HPM or ethanol pretreatment. On the reactive surface, uniform and glossy Ni deposition film was obtained. In order to clarify the effects of HPM- or ethanol-pretreatment on anodic reaction, the pretreated Si(100) wafers were immersed into aqueous alkaline solution excluding NiSO4, resulting acceleration of Si oxidation compared to the unpretreated Si(100) surface. The progress of surface reactivity was also clarified by open circuit potentials (OCP), XPS, and ex-situ ATR FTIR. Moreover, by using this pretreatment, selective deposition onto nano-patterned Si substrate was performed. A two-dimensional array of fine Ni dots (diameter ca. 80 nm) was successfully fabricated.

本文言語English
ページ(範囲)1295-1300
ページ数6
ジャーナルElectrochimica Acta
48
9 SPEC.
DOI
出版ステータスPublished - 2003 4 20

ASJC Scopus subject areas

  • 化学工学(全般)
  • 電気化学

フィンガープリント

「Nickel electroless deposition process on chemically pretreated Si(100) wafers in aqueous alkaline solution」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル