This letter reports the nitridation of GaAs surfaces using N2 through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2 pressure, indicating that N2 molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.
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