Nitridation of GaAs surfaces using nitrogen through a hot tungsten filament

Toshiki Makimoto*, Naoki Kobayashi

*この研究の対応する著者

研究成果: Article査読

38 被引用数 (Scopus)

抄録

This letter reports the nitridation of GaAs surfaces using N2 through a hot tungsten filament. After nitridation, GaAs cap layers were grown by molecular beam epitaxy to form GaAs/GaN/GaAs structures. For these structures, we determine the sheet nitrogen atom concentration by secondary ion mass spectrometry analysis. The sheet nitrogen atom concentration is proportional to the square root of the N2 pressure, indicating that N2 molecules are decomposed into nitrogen atoms to adsorb on the GaAs surfaces. The activation energy of this decomposition process is 3.6±0.4 eV.

本文言語English
ページ(範囲)548
ページ数1
ジャーナルApplied Physics Letters
67
DOI
出版ステータスPublished - 1995
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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