抄録
A gate insulator with a novel nitride-sandwiched oxide (NSO) structure was formed by successive NO and plasma nitridation steps. This approach reduced the leakage current to 15% of the oxide value, while enhancing the electron mobility by 15%. NSO also has high dielectric reliability and almost completely blocks B penetration in a PMOS device. Our experiments have confirmed that NSO is a very promising technology for forming gate insulators in low-power CMOS devices in the 100-nm to 80-nm node.
本文言語 | English |
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ホスト出版物のタイトル | Technical Digest - International Electron Devices Meeting |
ページ | 869-872 |
ページ数 | 4 |
出版ステータス | Published - 2002 |
外部発表 | はい |
イベント | 2002 IEEE International Devices Meeting (IEDM) - San Francisco, CA, United States 継続期間: 2002 12月 8 → 2002 12月 11 |
Other
Other | 2002 IEEE International Devices Meeting (IEDM) |
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国/地域 | United States |
City | San Francisco, CA |
Period | 02/12/8 → 02/12/11 |
ASJC Scopus subject areas
- 電子工学および電気工学